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产品分类
批发供应场效应管ST2302
ST/意法
ST2302
*缘栅(MOSFET)
N沟道
增强型
MIN/微型
SMD(SO)/表面封装
GE-N-FET锗N沟道
20（V）
12（V）
-（μS）
,（pF）
相关产品
产品信息
N Channel Enchancement Mode MOSFET ST2302
3.6A
D*CRIPTION
The ST2302 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outine surface mount package.
FEATURE
z 20V/3.6A, RDS(ON) = 80m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 95m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design